Research Scientist (Device Integration) (SiC), IME

Description du poste:

Job Description:

* Develop and optimize process flows for SiC MOSFET fabrication, with emphasis on process integration, yield enhancement, and manufacturability.
* Collaborate with cross-functional teams to design, develop, and qualify process modules for SiC MOSFET production.
* Perform process characterization and optimization to ensure target device performance, yield, and reliability metrics are achieved.
* Drive innovation by investigating and implementing advanced process technologies for next-generation SiC MOSFETs.
* Work closely with various stakeholders (e.g., characterization, circuit design, and reliability engineers) to analyze and resolve device or test-related issues.

Job Requirements:

* Ph.D. in Electrical/Electronic Engineering, Materials Science, Physics, or a related field.
* Proven experience (2?3 years) in Si or power device process integration, semiconductor manufacturing, or related areas.
* Candidates with no professional experience but relevant research experience (e.g., SiC, GaN, or power device technology) may apply.
* Solid understanding of semiconductor unit processes such as lithography, etching, thin film deposition, CMP, implantation, and PVD.
* Strong teamwork skills with the ability to work independently when required.
* Prior internship or working experience in semiconductor R&D or manufacturing is an advantage.
* Excellent communication and interpersonal skills, with the ability to collaborate effectively in a multidisciplinary environment