Internship High speed photodiode for next generation optical system

Description du poste:

You will be part of the wafer processing team and work in the development of advanced process building blocks for ultra high speed photodiode targeting bandwidth above 100 GHz. Currently, a particular point of attention is at the crossroad of epitaxy (growth of semiconductor layer) and wafer processing (semiconductor definition through etching, metallization, dielectric deposition, passivation,…). In particular the impact of epitaxy method (MOVPE, MBE, nature of P dopent: Zn, Be, C,…) on the performance and the impact of an regrowth on the performance. In relation with an expert team from wafer processing, epitaxy and design team, you will elaborate a plan of experiment and process wafers of photodiode to validate the best processing approach. This will include use of advanced lithography tools, dielectric and metal deposition and etching techniques, and will be followed by advanced characterization through bandwidth measurement

Are you passionate about solving problems? As part of our team, you will mainly work inside a cleanroom:
* Improve the current manufacturing process and develop new building blocks
* Learn to operate a wide range of tools used in semiconductor industry like stepper lithography, dry/wet etching and characterization
* Participate in the design of manufacturing processes for photonic integrated circuit
* Contribute to the manufacturing and measurement of ultra high speed (>100 GHz) photodiode

Profil requis du candidat:

You are:
* Student in master 2 or last year of engineer school or equivalent
* Available fulltime for 5 to 6 months
* With a background in physics, chemistry, micro-engineering, optics or a related discipline
* Interested for experimental work, meticulous

Would be good if you also have:
* Knowledge on cleanroom semiconductor manufacturing
* Communication and writing skills