Investigating Self-Heating in Advanced Transistors Intern (m/f/d)

Job Description:

Job Details:

Job Description:
Contributes to the design, simulation, and verification of digital and/or analog circuits. Works to ensure robust circuit implementation and integration and may also assist in schematic entry, timing analysis, and optimization for power, performance, and area. As an intern, learns and applies knowledge, builds skills, and explores future career opportunities through handson experience and projects that support Intel business goals in a collaborative environment. Position-specific: We are seeking a motivated Master's student to conduct an experimental investigation into the self-heating effect in semiconductor devices. This research will focus on thermal effects in circuits and characterization techniques, with the aim of improving the accuracy of self-heating models in circuit simulations.With the increasing operating frequencies and miniaturization of electronics, transistors are densely packed, raising power densities and leading to transient self-heating effects. These effects alter device characteristics and impact circuit operation. Accurate modeling of self-heating requires precise characterization data, which is challenging to obtain due to the short time scales involved in advanced transistor devices like 3D FinFETs and Gate All Around FETs.The goal of this thesis is to compare different characterization methods for analyzing the self-heating effect in advanced FinFET technologies and prepare these methods for Gate All Around technologies. This involves using both modeling approaches and experimental methods, including techniques like the AC-DC mixed method or pulsed measurements.

Qualifications:
Required Qualifications:Master's student in Electrical Engineering or PhysicsBachelor's degree completedBackground in semiconductor devices and/or circuit designExperience with electrical characterization techniquesProficiency in SPICE simulation toolsPreferred Qualifications:Knowledge of thermal effects in semiconductor devicesFamiliarity with advanced transistor technologies (FinFET, Gate All Around FET)Experience with AC-DC mixed methods or pulsed measurement techniquesUnderstanding of circuit modeling and simulationKey Skills:Experimental design and data analysisCircuit simulation and modelingSemiconductor device characterizationSelf-motivated research abilities

Job Type:
Student / Intern

Shift:
Shift 1 (Germany)

Primary Location:
Germany, Munich

Additional Locations:

Business group:
Intel makes possible the most amazing experiences of the future. You may know us for our processors. But we do so much more. Intel invents at the boundaries of technology to make amazing experiences possible for business and society, and for every person on Earth. Harnessing the capability of the cloud, the ubiquity of the Internet of Things, the latest advances in memory and programmable solutions, and the promise of always-on 5G connectivity, Intel is disrupting industries and solving global challenges. Leading on policy, diversity, inclusion, education and sustainability, we create value for our stockholders, customers, and society.

Posting Statement:
All qualified applicants will receive consideration for employment without regard to race, color, religion, religious creed, sex, national origin, ancestry, age, physical or mental disability, medical condition, genetic information, military and veteran status, marital status, pregnancy, gender, gender expression, gender identity, sexual orientation, or any other characteristic protected by local law, regulation, or ordinance.

Position of Trust
N/A

Work Model for this RoleThis role will be eligible for our hybrid work model which allows employees to split their time between working on-site at their assigned Intel site and off-site. * Job posting details (such as work model, location or time type) are subject to change